Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs

0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.06.022 ⇑ Corresponding author. Tel.: +82 2 2123 4619; fax E-mail address: [email protected] (I. Yun). In this paper, the characteristic degradations of multi-finger MOSFETs with different gate structures are experimentally investigated when the gate voltage stress is applied. Here, the degradations of threshold voltage (Vth), subthreshold swing (Ssub), and mobility are analyzed depending on the gate geometry. In addition, the correlation between the gate structure considering the effective channel length and the charge trapping effect due to line edge roughness is also investigated using the charge trap density and the off current. 2012 Elsevier Ltd. All rights reserved.